smd type ic smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1. gate 2. drain 3. source 2SK3050 features low on-resistance. fast switching speed. wide soa (safe operating area). gate-source voltage (v gss ) guaranteed to be 30v. easily designed drive circuits. easy to use in parallel. silicon n-channel mosfet absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 600 v gate to source voltage v gss 30 v drain current(dc) i d 2a drain current (pulse) * i dp 6a body to drain diode reverse drain current i dr 2a body to drain diode reverse drain current(pulse) * i drp 6a total power dissipation (tc=25 ) p d 20 w channel temperature tch 150 storage temperature t stg -55 to +150 *pw 10s,dduty cycle 1%. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate to source leak current i gss v gs = 30v, v ds =0v 100 na drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 600 v zero gate voltage drain current i dss v ds =600v, v gs =0v 100 a gate threshold voltage v gsth v ds =10v, i d =1ma 2.0 4.0 v staticdraintosourceonstateresistance r ds(on) i d =1a, v gs =10v 4.4 5.5 forward transfer admittance |yfs| i d =1a, v ds =10v 0.5 1.0 s input capacitance c iss v ds =10v 280 pf output capacitance c oss v gs =0v 48 pf reverse transfer capacitance c rss f=1mhz 16 pf turn-on delay time t d(on) v gs =10v 12 ns rise time t r r l =300 17 ns turn-off delay time t d(off) r g =10 29 ns fall time t f i d =1a, v dd =300v 105 ns reverse recovery time t rr i dr =2a, v gs =0v 460 ns reverse recovery charge q rr di/dt=100a/ s 2.0 c smd type ic smd type smd type smd type smd type ic smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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